This report presents the characterization of singly-clamped and doubly-clamped resonator devices. Resistance tests were performed to ensure adequate top-to-bottom insulation, allowing the characterization work to proceed. The piezoelectric characteristics of the devices were evaluated through their transverse piezoelectric coefficient, d31. In order to estimate this coefficient in singly-clamped devices, the resonators were driven at resonance with increasing drive voltages and their behavior was compared to the theory. In doubly-clamped devices, the method consisted in applying a DC bias through the piezoelectric layer, which modulated the stress within the resonator and thus altered the resonance frequency. The d31 could then be extracted after thorough matching with simulations