Abstract
In this presentation, we revisit some charge-voltage dependences for different architectures of field effect transistor, emphasizing on compactness and simplicity while maintaining a close link with physics, which makes these models predictive and accurate for general purposes of compact modeling.
Details
Title
Charge-based modeling of field effect transistors, Make it easy
Author(s)
Sallese, Jean-Michel
Published in
2021 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (Eurosoi-Ulis)
Series
International Conference on Ultimate Integration on Silicon
Conference
Joint International EUROSOI Workshop / International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 01-03, 2021, Caen, FRANCE
Date
2021-01-01
Publisher
New York, IEEE
ISSN
2330-5738
2472-9132
2472-9132
ISBN
978-1-6654-3745-5
Keywords
Other identifier(s)
View record in Web of Science
Laboratories
GR-SCI-IEL
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > GR-SCI-IEL - IEL Scientists Group
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2022-05-23